Qorvo launches 1,200V SiC FETs for EV applications from rds calculator Watch Video
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Description: Electronics developer Qorvo has released a next-generation series of 1,200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with what it states are industry-leading figures of merit in on-resistance. The UF4C/SC series of 1200V Gen 4 SiC FETs are suited for mainstream 800V bus architectures in onboard chargers for electric vehicles in addition to other applications. nnAnup Bhalla, chief engineer, power devices, at UnitedSiC/Qorvo, said. “Expanding our 1,200V range with higher performance
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